mmdt4146 document number: ds30162 rev. 11 - 2 1 of 5 www.diodes.com january 2009 ? diodes incorporated mmdt4146 complementary npn / pnp small signal surface mount transistor features ? complementary pair one 4124-type npn one 4126-type pnp ? epitaxial planar die construction ? ideal for medium power amplification and switching ? ultra-small surface mount package ? lead free/rohs compliant (note 3) ? "green" device (note 4 and 5) mechanical data ? case: sot-363 ? case material: molded plas tic, ?green? molding compound, note 5. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating) solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.006 grams (approximate) maximum ratings, npn 4124 section @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5.0 v collector current ? continuous (note 1) i c 200 ma maximum ratings, pnp 4126 section @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -4 v collector current - continuous (note 1) i c -200 ma thermal characteristics ? total device characteristic symbol value unit power dissipation (note 1, 2) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w notes: 1. device mounted on fr-4 pcb, 1 in ch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http: //www.diodes.com/datasheets/ap02001.pdf. 2. maximum combined dissipation. 3. no purposefully added lead. 4. diodes inc.'s "green" policy can be found on ou r website at http://www.diodes.c om/products/lead_free/index.php. 5. product manufactured with date code uo (week 40, 2007) and newer are built with green molding compound. product manufact ured prior to date code uo are built with non-green molding co mpound and may contain halogens or sb2o3 fire retardants. top view device schematic c 2 b 1 e 1 e 2 b 2 c 1 e1, b1, c1 = pnp4126 section e2, b2, c2 = npn4124 section
mmdt4146 document number: ds30162 rev. 11 - 2 2 of 5 www.diodes.com january 2009 ? diodes incorporated mmdt4146 electrical characteris tics, npn 4124 section @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 6) collector-base breakdown voltage v ( br ) cbo 30 ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage v ( br ) ceo 25 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo 5.0 ? v i e = 10 a, i c = 0 collector cutoff current i cbo ? 50 na v cb = 20v, i e = 0v emitter cutoff current i ebo ? 50 na v eb = 3.0v, i c = 0v on characteristics (note 6) dc current gain h fe 120 60 360 ? ? i c = 2.0ma, v ce = 1.0v i c = 50ma, v ce = 1.0v collector-emitter saturation voltage v ce ( sat ) ? 0.30 v i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be ( sat ) ? 0.95 v i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 4.0 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo ? 8.0 pf v eb = 0.5v, f = 1.0mhz, i c = 0 small signal current gain h fe 120 480 ? v ce = 1.0v, i c = 2.0ma, f = 1.0khz current gain-bandwidth product f t 300 ? mhz v ce = 20v, i c = 10ma, f = 100mhz noise figure nf ? 5.0 db v ce = 5.0v, i c = 100 a, r s = 1.0k , f = 1.0khz electrical characteris tics, pnp 4126 section @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 6) collector-base breakdown voltage v ( br ) cbo -25 ? v i c = -10 a, i e = 0 collector-emitter breakdown voltage v ( br ) ceo -25 ? v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo -4.0 ? v i e = -10 a, i c = 0 collector cutoff current i cbo ? -50 na v cb = -20v, i e = 0v emitter cutoff current i ebo ? -50 na v eb = -3.0v, i c = 0v on characteristics (note 6) dc current gain h fe 120 60 360 ? ? i c = -2.0ma, v ce = -1.0v i c = -50ma, v ce = -1.0v collector-emitter saturation voltage v ce ( sat ) ? -0.40 v i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be ( sat ) ? -0.95 v i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo ? 4.5 pf v cb = -5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo ? 10 pf v eb = -0.5v, f = 1.0mhz, i c = 0 small signal current gain h fe 120 480 ? v ce = -1.0v, i c = -2.0ma, f = 1.0khz current gain-bandwidth product f t 250 ? mhz v ce = -20v, i c = -10ma, f = 100mhz noise figure nf ? 4.0 db v ce = -5.0v, i c = -100 a, r s = 1.0k , f = 1.0khz notes: 6. short duration pulse test used to minimize self-heating effect.
mmdt4146 document number: ds30162 rev. 11 - 2 3 of 5 www.diodes.com january 2009 ? diodes incorporated mmdt4146 0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 power dissipation vs. ambient temperature (total device, note 1) a 150 200 250 300 350 0 rc/w ja = 625 1 10 1,000 100 0.1 1 10 1,000 100 h, d c c u r r en t g ain fe i , collector current (ma) fig. 2 typical dc current gain vs. collector current (pnp-4126) c 0.01 0.1 10 1 1 10 100 1,000 v, c o lle c t o r -emi t t e r saturation voltage ce(sat) (v) i , collector current (ma) fig. 3 typical collector-emitter saturation voltage vs. collector current (pnp-4126) c 0.5 0.6 0.7 0.8 0.9 1.0 11 01 0 0 v , base-emi t t e r sa t u r a t i o n v o l t a g e be(sat) (v) i , collector current (ma) fig. 4 typical base-emitter saturation voltage vs. collector current (pnp-4126) c i c i b = 10 1 100 10 0.1 1 10 100 c a p a c i t an c e (p f ) v , reverse voltage (v) fig. 5 typical capacitance characteristics (pnp-4126) r 1 10 1,000 100 0.1 1 10 1,000 100 h, d c c u r r en t g ain fe i , collector current (ma) fig. 6 typical dc current gain vs. collector current (npn-4124) c
mmdt4146 document number: ds30162 rev. 11 - 2 4 of 5 www.diodes.com january 2009 ? diodes incorporated mmdt4146 0.01 0.1 1 0.1 1 10 100 1,000 v, c o lle c t o r -emi t t e r saturation voltage ce(sat) (v) i , collector current (ma) fig. 7 typical collector-emitter saturation voltage vs. collector current (npn-4124) c 0.1 1 10 0.1 1 10 100 1,000 v , base-emi t t e r sa t u r a t i o n v o l t a g e be(sat) (v) i , collector current (ma) fig. 8 typical base-emitter saturation voltage vs. collector current (npn-4124) c 0 5 1 5 10 0.1 1 10 100 c a p a c i t a n c e (p f ) v , reverse voltage (v) fig. 9 typical capacitance characteristics (npn-4124) r ordering information (note 7) part number case packaging mmdt4146-7-f sot-363 3000/tape & reel notes: 7. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 code j k l m n p r s t u v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d k12 = product type marking code ym = date code marking y = year (ex: n = 2002) m = month (ex: 9 = september) k12 ym
mmdt4146 document number: ds30162 rev. 11 - 2 5 of 5 www.diodes.com january 2009 ? diodes incorporated mmdt4146 package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 typ f 0.40 0.45 h 1.80 2.20 j 0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.22 0 8 all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 a m j l d b c h k f x z y c1 c2 c2 g
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